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 BC549C, BC550C Low Noise Transistors
NPN Silicon
Features
* These are Pb-Free Devices*
MAXIMUM RATINGS
Rating Collector -Emitter Voltage BC549C BC550C Collector -Base Voltage BC549C BC550C Emitter -Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above = 25C Total Device Dissipation @ TA = 25C Derate above = 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 30 50 5.0 100 625 5.0 1.5 12 -55 to +150 Vdc Vdc mW mW/C W mW/C C Symbol VCEO 30 45 Vdc Value Unit Vdc
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COLLECTOR 1 2 BASE 3 EMITTER
3 STRAIGHT LEAD BULK PACK
12
TO-92 CASE 29 STYLE 17
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W BC5x yC AYWW G G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
BC5xyC = Device Code x = 4 or 5 y = 9 or 0 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device BC549CG *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2007
Package TO-92 (Pb-Free) TO-92 (Pb-Free)
Shipping 5000 Units / Bulk
BC550CG
5000 Units / Bulk
1
March, 2007 - Rev. 2
Publication Order Number: BC550C/D
BC549C, BC550C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) Base-Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) Base-Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current -Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 200 mAdc, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) (IC = 200 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz) 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 ms - Duty cycle = 2%. fT - Ccbo - hfe 450 NF1 NF2 - - 600 0.6 - 900 dB 2.5 10 2.5 - - 250 - pF MHz hFE 100 420 VCE(sat) - - - VBE(sat) - VBE(on) - - 0.55 0.52 0.55 0.62 - - 0.7 1.1 - Vdc 0.075 0.3 0.25 0.25 0.6 0.6 Vdc 270 500 - 800 Vdc - V(BR)CEO 45 V(BR)CBO 50 V(BR)EBO 5.0 ICBO - - IEBO - - 15 - - 15 5.0 nAdc mAdc nAdc - - - - Vdc - - Vdc Vdc Symbol Min Typ Max Unit
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
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2
BC549C, BC550C
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
Figure 2. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 3. "Saturation" and "On" Voltages
400 300 C, CAPACITANCE (pF) 200 100 80 60 40 30 20
10 7.0 5.0 Cib TA = 25C
VCE = 10 V TA = 25C
3.0 Cob 2.0
f T, CURRENT-GAIN
0.5 0.7
1.0
2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
50
1.0 0.4
0.6
1.0
2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
Figure 4. Current-Gain -- Bandwidth Product
Figure 5. Capacitance
r b, BASE SPREADING RESISTANCE (OHMS)
170 160
150 VCE = 10 V f = 1.0 kHz TA = 25C
140
130
120 0.1
0.2
0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 6. Base Spreading Resistance
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3
BC549C, BC550C
PACKAGE DIMENSIONS
TO-92 (TO-226) CASE 29-11 ISSUE AM
A R P L
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
B
STRAIGHT LEAD BULK PACK
K
XX G H V
1
D J C SECTION X-X N N
R
A
B
BENT LEAD TAPE & REEL AMMO PACK
P T
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
K
XX G
D J V C SECTION X-X N
1
DIM A B C D G J K N P R V
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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4
BC550C/D


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